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Л2-54
Devices for testing of semiconductor devices and microcircuitry parameters.

LOW-POWER TRANSISTOR-AND-DIODE TESTER Л2-54

The description.

This tester is intended for assessing the performance of low-power transistors and low- and medium-power diodes by measuring their basic parameters in the development, operation and repair of the electronic equipment.


SPECIFICATIONS:
Measurement range:
   current gain h21в ≥0,9 - ≤1
   output conductance h22, MS. ≥0,4 - ≤4
   collector counter-current Iсво, MA ≥0,01 - ≤100
   diode reverse current IR, MA ≥0,01 - ≤100
   diode forward voltage U, V ≥0,1 - ≤3
   stabilizing voltage of Zener diodes Uz, V ≥3 - ≤30
Measurement error:
   h21в, h22, UF, UZ, % ±5
   Iсво, IR a measurement range 0,01 to 0,1 MA, % ±15
   Iсво, IR a measurement range 0,1 to 100 MA, % ±5
Complementary measurement error when ambient temperature changes from 278 to 313 K (from 5 to 40 °C) per each 10 K (10 °C) of temperature variation relative to temperature 293 K (20 °C), max:
   h21в,h22,UF,Uz,% ±2,5
   Iсво, IR a measurement range 0,01 to 0,1 MA, % ±7,5
   Iсво, IR a measurement range 0,1 to 100MA, % ±2,5
   IF,% ±2
   UR, % ±1
Setting range:
   diode reverse voltage UR, V ≥10 - ≤400
   diode forward current IF, mA ≥5 - ≤300
setting error UR, IF, % ±2
DC operating conditions of transistor tested:
   emitter current, mA 1
   collector voltage, V 4,5
   emitter current, mA 5
   collector voltage, V 4,5
Setting error oi transistor DC operating conditions, % ±3
Supply voltage, V:
   AC 50 Hz mains 220/50
   six type A373 batteries 9
mean-time-between-failures, hours 10000
Dimensions, mm 205x300x185
Weight, kg 6
ambient temperature, °C from 5 to 40




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